Hybrid silicon laser technology: A thermal perspective

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 6, 2011, Pages 1490-1498

  Sysak, Matthew N ^a   Liang, Di ^b   Jones, Richard ^a   Kurczveil, Geza ^c   Piels, Molly ^c   Fiorentino, Marco ^b   Beausoleil, Raymond G ^b   Bowers, John E ^c  

^a INTEL CORPORATION   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

^c University of California   (United States)

Author keywords

Laser thermal factors; optoelectronic devices; semiconductor lasers; silicon on insulator technology

Indexed keywords

BURIED OXIDE LAYERS; BURIED OXIDES; HIGH ELECTRICAL POWER; HIGH TEMPERATURE; HYBRID SILICON; INTEGRATION PLATFORM; LASER PERFORMANCE; LASER THERMAL FACTORS; LOW THERMAL CONDUCTIVITY; OPTICAL CONFINEMENT; SILICON ON INSULATOR; THERMAL PERSPECTIVE;

OPTOELECTRONIC DEVICES; POWER QUALITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR LASERS; THERMAL CONDUCTIVITY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 79953678191     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2011.2109940     Document Type: Review

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