Low-temperature growth and orientational control in RuO2 thin films by metal-organic chemical vapor deposition

Thin Solid Films

Volumn 310, Issue 1-2, 1997, Pages 75-80

  Bai, G R ^a   Wang, A ^a   Foster, C M ^a   Vetrone, J ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Chemical vapor deposition; Ruthenium oxide; Thin films

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; RUTHENIUM COMPOUNDS; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS;

RUTHENIUM OXIDE FILMS;

CONDUCTIVE FILMS;

EID: 0031277213     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00353-2     Document Type: Article

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