Furthering the understanding of quantum well intermixing in InP

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn 2000-January, Issue , 2000, Pages 197-204

  Haysom, J E ^a,b   Piva, P G ^b,c   Poole, P J ^b   Aers, G C ^b   Raymond, S ^b   Chen, H ^d   Feenstra, R M ^d   Charbonneau, S ^b   Mitchell, I V ^c  

^a UNIVERSITY OF OTTAWA   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c UNIVERSITY OF WESTERN ONTARIO   (Canada)

^d CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Astronomy; Capacitive sensors; Councils; Indium phosphide; Ion implantation; Lattices; Optical buffering; Physics; Rapid thermal annealing; Temperature

Indexed keywords

ASTRONOMY; CAPACITIVE SENSORS; CHARACTERIZATION; CRYSTAL LATTICES; INDIUM PHOSPHIDE; INSULATING MATERIALS; ION IMPLANTATION; MIXING; OPTICAL LATTICES; PHYSICS; RAPID THERMAL ANNEALING; TEMPERATURE;

COUNCILS; HEAVY HOLES; LIGHT-HOLE TRANSITIONS; LOW TEMPERATURES; OPTICAL BUFFERING; QUANTUM WELL INTERMIXING; STRAIN DEVELOPMENT; SUB-LATTICES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84950148016     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SIM.2000.939226     Document Type: Conference Paper

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