Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread

Physica Status Solidi (A) Applications and Materials Science

Volumn 212, Issue 12, 2015, Pages 2850-2855

  Mavlonov, Abdurashid ^a   Richter, Steffen ^a   Von Wenckstern, Holger ^a   Schmidt Grund, Rüdiger ^a   Lenzner, Jörg ^a   Lorenz, Michael ^a   Grundmann, Marius ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

(Mg; doping; Pulsed laser deposition; thin films; transparent conductive oxides; Zn)O

Indexed keywords

ALUMINUM; CONDUCTIVE FILMS; DEPOSITION; DOPING (ADDITIVES); PULSED LASER DEPOSITION; PULSED LASERS; SAPPHIRE; SEMICONDUCTOR DOPING; ZINC;

C-PLANE SAPPHIRE SUBSTRATES; COMPOSITION GRADIENT; COMPOSITION SPREAD; DOPANT CONCENTRATIONS; DOPING EFFICIENCY; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRICAL DATA; TRANSPARENT CONDUCTIVE OXIDES;

THIN FILMS;

EID: 84949724641     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201431932     Document Type: Article

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