Tunable electronic structures in the two-dimension SnX 2 (X = S and Se) nanosheets by stacking effects

Applied Surface Science

Volumn 356, Issue , 2015, Pages 1200-1206

  Zhang, Heng ^a   Xia, Congxin ^a,b   Zhao, Xu ^a   Wang, Tianxing ^a   Li, Jingbo ^a  

^a HENAN NORMAL UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Electronic structures; Nanosheets; Optical properties; Tin dichalcogenides

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; NANOSHEETS; OPTICAL PROPERTIES;

BAND-GAP VALUES; BI-LAYER STRUCTURE; DICHALCOGENIDES; EQUILIBRIUM INTERLAYERS; IMAGINARY PARTS; INTERLAYER DISTANCE; NUMERICAL RESULTS; STACKING PATTERNS;

DENSITY FUNCTIONAL THEORY;

EID: 84948708540     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.08.213     Document Type: Article

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