Enhancement of the anisotropic photocurrent in ferroelectric oxides by strain gradients

Nature Nanotechnology

Volumn 10, Issue 11, 2015, Pages 972-979

  Chu, Kanghyun ^a   Jang, Byung Kweon ^a   Sung, Ji Ho ^b,c   Shin, Yoon Ah ^b   Lee, Eui Sup ^a   Song, Kyung ^b   Lee, Jin Hong ^a   Woo, Chang Su ^a   Kim, Seung Jin ^a   Choi, Si Young ^d   Koo, Tae Yeong ^e   Kim, Yong Hyun ^a   Oh, Sang Ho ^b   Jo, Moon Ho ^b,c   Yang, Chan Ho ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

^c Institute for Basic Science   (South Korea)

^d Korea Institute of Material Science   (South Korea)

^e POSTECH   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DOMAIN WALLS; ELECTRON HOLOGRAPHY; PHASE SEPARATION; PHOTOCURRENTS; SCANNING PROBE MICROSCOPY;

CHARGED DOMAIN WALL; ELECTROMECHANICAL PROPERTY; FERROELECTRIC OXIDES; FLEXOELECTRIC EFFECTS; NANOSCALE CHARACTERIZATION; PHASE-FIELD SIMULATION; PHOTOCURRENT MEASUREMENT; PIEZORESPONSE FORCE MICROSCOPY;

PHASE INTERFACES;

BISMUTH; FERRITE; IRON OXIDE; NANOMATERIAL;

ANISOTROPY; ARTICLE; DIPOLE; ELECTRIC CURRENT; ELECTRON; HOLOGRAPHY; PHASE SEPARATION; PHOTOCURRENT; PHOTON; PIEZOELECTRICITY; POLARIZATION; PRIORITY JOURNAL; SHORT CIRCUIT CURRENT; TRANSMISSION ELECTRON MICROSCOPY;

EID: 84947035648     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2015.191     Document Type: Article

References (47)

1. Tagantsev, A. K. Electric polarization in crystals and its response to thermal and elastic perturbations. Phase Transit. 35, 119-203 (1991).
2. Kogan, S. M. Piezoelectric effect during inhomogeneous deformation and acoustic scattering of carriers in crystals. Sov. Phys. Solid State 5, 2069-2070 (1964).
3. Catalan, G., Noheda, B., McAneney, J., Sinnamon, L. J., & Gregg, J. M. Strain gradients in epitaxial ferroelectrics. Phys. Rev. B 72, 020102 (2005).
4. Cronin, D. W., Petschek, R. G., & Terentjev, E. M. Second-order flexoelectric effect in chiral nematic liquid crystals. J. Chem. Phys. 98, 9199 (1993).
5. Zubko, P., Catalan, G., Buckley, A., Welche, P. R. L., & Scott, J. F. Strain-gradientinduced polarization in SrTiO3 single crystals. Phys. Rev. Lett. 99, 167601 (2007).
6. Nguyen, T. D., Mao, S., Yeh, Y.-W., Purohit, P. K., & McAlpine, M. C. Nanoscale flexoelectricity. Adv. Mater. 25, 946-974 (2013).
7. Zubko, P., Catalan, G., & Tagantsev, A. K. Flexoelectric effect in solids. Annu. Rev. Mater. Res. 43, 387-421 (2013).
8. Scott, J. F. Flexoelectric spectroscopy. J. Phys. Condens. Matter 25, 331001 (2013).
9. Ma, W., & Cross, L. E. Flexoelectric polarization of barium strontium titanate in the paraelectric state. Appl. Phys. Lett. 81, 3440-3442 (2002).
10. Catalan, G. et al. Flexoelectric rotation of polarization in ferroelectric thin films. Nature Mater. 10, 963-967 (2011).
11. Lee, D. et al. Giant flexoelectric effect in ferroelectric epitaxial thin films. Phys. Rev. Lett. 107, 057602 (2011).
12. Lu, H. et al. Mechanical writing of ferroelectric polarization. Science 336, 59-61 (2012).
13. Jia, C.-L. et al. Unit-cell scale mapping of ferroelectricity and tetragonality in epitaxial ultrathin ferroelectric films. Nature Mater. 6, 64-69 (2007).
14. Chu, M.-W. et al. Impact of misfit dislocations on the polarization instability of epitaxial nanostructured ferroelectric perovskites. Nature Mater. 3, 87-90 (2004).
15. Nagarajan, V. et al. Misfit dislocations in nanoscale ferroelectric heterostructures. Appl. Phys. Lett. 86, 192910 (2005).
16. Oh, S. H., Legros, M., Kiener, D., & Dehm, G. In situ observation of dislocation nucleation and escape in a submicrometre aluminium single crystal. Nature Mater. 8, 95-100 (2009).
17. Nelson, C. T. et al. Domain dynamics during ferroelectric switching. Science 334, 968-971 (2011).
18. Zeches, R. J. et al. A strain-driven morphotropic phase boundary in BiFeO3. Science 326, 977-980 (2009).
19. Borisevich, A. Y. et al. Atomic-scale evolution of modulated phases at the ferroelectric-Antiferroelectric morphotropic phase boundary controlled by flexoelectric interaction. Nature Commun. 3, 775 (2012).
20. You, L. et al. Characterization and manipulation of mixed phase nanodomains in highly strained BiFeO3 thin films. ACS Nano 6, 5388-5394 (2012).
21. Lu, H Et Al. Mechanically-induced Resistive Switching in Ferroelectric Tunnel Junctions. Nano Lett. 12, 6289-6292 (2012).
22. Lee, D., Yang, S M., Yoon, J.-G., & Noh, T. W. Flexoelectric Rectification of Charge Transport in Strain-graded Dielectrics. Nano Lett. 12, 6436-6440 (2012).
23. Eliseev, E. A., Morozovska, A. N., Svechnikov, G. S., Maksymovych, P., & Kalinin, S. V. Domain wall conduction in multiaxial ferroelectrics. Phys. Rev. B 85, 045312 (2012).
24. Martin, L. W. et al. Multiferroics and magnetoelectrics: thin films and nanostructures. J. Phys. Condens. Matter 20, 434220 (2008).
25. Yang, S. Y. et al. Above-bandgap voltages from ferroelectric photovoltaic devices. Nature Nanotech. 5, 143-147 (2010).
26. Choi, T., Lee, S., Choi, Y. J., Kiryukhin, V., & Cheong, S.-W. Switchable ferroelectric diode and photovoltaic effect in BiFeO3. Science 324, 63-66 (2009).
27. Lee, W.-M. et al. Spatially resolved photodetection in leaky ferroelectric BiFeO3. Adv. Mater. 24, OP49-OP53 (2012).
28. Sung, J. H. et al. Single ferroelectric-domain photovoltaic switch based on lateral BiFeO3 cells. NPG Asia Mater. 5, e38 (2013).
29. Bharathi, K. K. et al. Detection of electrically formed photosensitive area in Ca-doped BiFeO3 thin films. Appl. Phys. Lett. 102, 012908 (2013).
30. Seidel, J. et al. Efficient photovoltaic current generation at ferroelectric domain walls. Phys. Rev. Lett. 107, 126805 (2011).
31. Béa, H. et al. Evidence for room-Demperature multiferroicity in a compound with a giant axial ratio. Phys. Rev. Lett. 102, 217603 (2009).
32. Ko, K.-D. et al. Concurrent transition of ferroelectric and magnetic ordering near room temperature. Nature Commun. 2, 567 (2011).
33. Infante, I. C. et al. Multiferroic phase transition near room temperature in BiFeO3 films. Phys. Rev. Lett. 107, 237601 (2011).
34. MacDougall, G. J. et al. Antiferromagnetic transitions in tetragonal-like BiFeO3. Phys. Rev. B 85, 100406 (2012).
35. Christen, H. M., Nam, J. H., Kim, H. S., Hatt, A. J., & Spaldin, N. A. Stress-induced R-MA-MC-D symmetry changes in BiFeO3 films. Phys. Rev. B 83, 144107 (2011).
36. Chen, Z. et al. Low-symmetry monoclinic phases and polarization rotation path mediated by epitaxial strain in multiferroic BiFeO3 thin films. Adv. Funct. Mater. 21, 133-138 (2011).
37. Kreisel, J. et al. A phase transition close to room temperature in BiFeO3 thin films. J. Phys. Condens. Matter 23, 342202 (2011).
38. Diéguez, O., González-Vázquez, O. E., Wojdel, J. C., & Iñiguez, J. First-principles predictions of low-energy phases of multiferroic BiFeO3. Phys. Rev. B 83, 094105 (2011).
39. Chen, L.-Q. Phase-field method of phase transitions/domain structures in ferroelectric thin films: a review. J. Am. Ceram. Soc. 91, 1835-1844 (2008).
40. Rossell, M. D. et al. Atomic structure of highly strained BiFeO3 thin films. Phys. Rev. Lett. 108, 047601 (2012).
41. Koch, C. T. A flux-preserving non-linear inline holography reconstruction algorithm for partially coherent electrons. Ultramicroscopy 108, 141-150 (2008).
42. Chen, P. et al. Optical properties of quasi-Detragonal BiFeO3 thin films. Appl. Phys. Lett. 96, 131907 (2010).
43. Chichibu, S. F. et al. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures. Appl. Phys. Lett. 73, 2006 (1998).
44. Park, S. R., Kim, C. H., Yu, J., Han, J. H., & Kim, C. Orbital-Angular-momentum based origin of Rashba-Dype surface band splitting. Phys. Rev. Lett. 107, 156803 (2011).
45. Seidel, J. et al. Domain wall conductivity in La-doped BiFeO3. Phys. Rev. Lett. 105, 197603 (2010).
46. Morozovska, A. N. et al. Defect thermodynamics and kinetics in thin strained ferroelectric films: the interplay of possible mechanisms. Phys. Rev. B 89, 054102 (2014).
47. Koch, C. T., Ozdöl, V. B., & van Aken, P. A. An efficient, simple, and precise way to map strain with nanometer resolution in semiconductor devices. Appl. Phys. Lett. 96, 091901 (2010).