Electronic topological transition and semiconductor-to-metal conversion of Bi2Te3 under high pressure

Applied Physics Letters

Volumn 103, Issue 5, 2013, Pages

  Zhang, Junkai ^a   Liu, Cailong ^a   Zhang, Xin ^a   Ke, Feng ^a   Han, Yonghao ^a   Peng, Gang ^a   Ma, Yanzhang ^b   Gao, Chunxiao ^a  

^a JILIN UNIVERSITY   (China)

^b Texas Tech University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL RESISTIVITY MEASUREMENTS; ELECTRONIC TOPOLOGICAL TRANSITION; PRESSURE DEPENDENT; STRUCTURAL PHASE TRANSITION; TEMPERATURE DEPENDENT; TOPOLOGICAL INSULATORS; TOPOLOGICAL PROPERTIES; TRANSPORT BEHAVIOR;

ELECTRIC CONDUCTIVITY; HALL MOBILITY; HIGH PRESSURE EFFECTS; SEMICONDUCTING TELLURIUM; TOPOLOGY;

BISMUTH;

EID: 84882396653     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816758     Document Type: Article

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