Anomaly close to an electronic topological semimetal-insulator transition in elemental fcc-Yb under pressure

Journal of Applied Physics

Volumn 114, Issue 14, 2013, Pages

  Enderlein, Carsten ^a   Ramos, Scheilla M ^b   Bittencourt, Magda ^a   Continentino, Mucio A ^a   Brewer, William ^c   Baggio Saitovich, Elisa ^a  

^a CENTRO BRASILEIRO DE PESQUISAS FÍSICAS   (Brazil)

^b CEA GRENOBLE   (France)

^c FREIE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECT OF DOPING; ELECTRONIC TOPOLOGIES; LOW TEMPERATURES; METALLIC PHASE; QUANTUM CRITICAL POINTS; RESISTIVITY MEASUREMENT; SCREENING COEFFICIENTS; UNIVERSALITY CLASS;

CRYSTAL IMPURITIES; SEMICONDUCTOR INSULATOR BOUNDARIES; TOPOLOGY;

YTTERBIUM;

EID: 84885966509     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4825073     Document Type: Article

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