Gate tunable MoS2-black phosphorus heterojunction devices

2D Materials

Volumn 2, Issue 3, 2015, Pages

  Chen, Peng ^a   Xiang, Jianyong ^b   Yu, Hua ^a   Zhang, Jing ^a   Xie, Guibai ^c   Wu, Shuang ^a   Lu, Xiaobo ^a   Wang, Guole ^a   Zhao, Jing ^a   Wen, Fusheng ^b   Liu, Zhongyuan ^b   Yang, Rong ^a   Shi, Dongxia ^a   Zhang, Guangyu ^a,d  

^a INSTITUTE OF PHYSICS   (China)

^b YANSHAN UNIVERSITY   (China)

^c CHINA ACADEMY OF SPACE TECHNOLOGY   (China)

^d The Collaborative Innovation Center of Quantum Matter   (China)

Author keywords

Black phosphorus; Current rectification; Gate tunable; MoS2; n n junction; p n junction

Indexed keywords

ELECTRIC RECTIFIERS; ENERGY GAP; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NARROW BAND GAP SEMICONDUCTORS; OPTOELECTRONIC DEVICES; PHOSPHORUS; VAN DER WAALS FORCES; WIDE BAND GAP SEMICONDUCTORS;

CURRENT RECTIFICATIONS; DIFFERENT THICKNESS; GATE TUNABLE; HETEROJUNCTION DEVICES; MOS2; P-N JUNCTION; TWO-DIMENSIONAL SEMICONDUCTORS; VAN DER WAALS INTERACTIONS;

HETEROJUNCTIONS;

EID: 84946580763     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/2/3/034009     Document Type: Article

References (17)

1. Wang QH, Kalantar-Zadeh K, Kis A, Coleman JN and Strano MS 2012 Nat. Nanotechnol. 7 699-712
2. Li L, Yu Y, Ye GJ, Ge Q, Ou X, Wu H, Feng D, Chen XH and Zhang Y 2014 Nat. Nanotechnol. 9 372-7
3. Buscema M, Groenendijk DJ, Blanter S I, Steele GA, van der Zant HS J and Castellanos-Gomez A 2014 Nano Lett. 14 3347-52
4. Lee CH et al 2014 Nat. Nanotechnol. 9 676-81
5. Baugher BWH, Churchill HOH, Yang Y F and Jarillo-Herrero P 2014 Nat. Nanotechnol. 9 262-7
6. Deng YX, Luo Z, Conrad NJ, Liu H, Gong Y J, Najmaei S, Ajayan PM, Lou J, Xu XF and Ye PD 2014 ACS Nano 8 8292-9
7. Oldham WG and Milnes AG 1963 Solid State Electron. 6 121-32
8. Womac J F and Rediker RH 1972 J. Appl. Phys. 43 4129-33
9. Lee S C and Pearson GL 1981 Solid State Electron. 24 563-8
10. Lee C, Yan H, Brus L E, Heinz T F, Hone J and Ryu S 2010 ACS Nano 4 2695-700
11. Liu H, Neal A T, Zhu Z, Luo Z, XuX F, Tomanek D and Ye PDD 2014 ACS Nano 8 4033-41
12. Fang H et al 2014 Proc. Natl Acad. Sci. USA 111 6198-202
13. Ceballos F, Bellus MZ, Chiu HY and Zhao H 2014 ACS Nano 8 12717-24
14. Hong XP, Kim J, Shi S F, Zhang Y, Jin CH, Sun YH, Tongay S, Wu JQ, Zhang Y F and Wang F 2014 Nat. Nanotechnol. 9 682-6
15. Mak KF, Lee C, Hone J, Shan J and Heinz T F 2010 Phys. Rev. Lett. 105 136805
16. Tran V, Soklaski R, Liang Y and Yang L 2014 Phys. Rev. B 89 235319
17. Jariwala D, Sangwan VK, Wu C-C, Prabhumirashi P L, Geier ML, Marks T J, Lauhon L J and Hersam MC 2013 Proc. Natl Acad. Sci. USA 110 18076-80