Thermoelectric properties of Mn-doped Ru2Si3

International Conference on Thermoelectrics, ICT, Proceedings

Volumn 2003-January, Issue , 2003, Pages 157-160

  Ivanenko, L ^a   Filonov, A ^a   Shaposhnikov, V ^a,b   Krivosheev, A ^a   Behr, G ^c   Souptel, D ^c   Schumann, J ^c   Vinzelberg, H ^c   Paschen, S ^d   Bentien, A ^d   Borisenko, V ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c IFW DRESDEN   (Germany)

^d MAX PLANCK INSTITUTE FOR CHEMICAL PHYSICS OF SOLIDS   (Germany)

Author keywords

Conductivity measurement; Crystals; Electric resistance; Hall effect; Heating; Silicides; Temperature distribution; Thermal conductivity; Thermal resistance; Thermoelectricity

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTALS; ELECTRIC RESISTANCE; HALL EFFECT; HALL MOBILITY; HEAT RESISTANCE; HEATING; RUBIDIUM COMPOUNDS; SEEBECK COEFFICIENT; SILICIDES; SILICON; SINGLE CRYSTALS; TEMPERATURE DISTRIBUTION; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

CLASSICAL SCATTERINGS; CONDUCTIVITY MEASUREMENTS; ELECTRONIC BAND STRUCTURE; FLOATING ZONE TECHNIQUE; TEMPERATURE VALUES; THEORETICAL CALCULATIONS; THERMOELECTRIC EFFICIENCY; THERMOELECTRIC PROPERTIES;

MANGANESE;

EID: 84946013352     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICT.2003.1287473     Document Type: Conference Paper

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