Thermoelectric properties of Rh-doped Ru2Si3 prepared by floating zone melting method

Journal of Nuclear Materials

Volumn 294, Issue 1-2, 2001, Pages 202-205

  Arita, Yuji ^a   Mitsuda, Satoshi ^a   Nishi, Yoshimasa ^a   Matsui, Tsuneo ^a   Nagasaki, Takanori ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; MELTING; RHODIUM; SEEBECK EFFECT; THERMAL EFFECTS;

FLOATING ZONE MELTING;

RUTHENIUM COMPOUNDS;

EID: 0035311043     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3115(01)00475-5     Document Type: Article

References (12)