Transport properties of Mn-doped Ru2Si3

Microelectronic Engineering

Volumn 70, Issue 2-4, 2003, Pages 209-214

  Ivanenko, L ^a,b   Filonov, A ^a   Shaposhnikov, V ^a   Behr, G ^b   Souptel, D ^b   Schumann, J ^b   Vinzelberg, H ^b   Plotnikov, A ^b   Borisenko, V ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b IFW DRESDEN   (Germany)

Author keywords

Doping with manganese; Semiconducting ruthenium silicide; Transport properties

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; MANGANESE; SINGLE CRYSTALS; TRANSPORT PROPERTIES;

HALL COEFFICIENTS;

RUTHENIUM COMPOUNDS;

EID: 0142011594     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00424-6     Document Type: Conference Paper

References (19)

1. 2+x thin films. Thin Solid Films. 381:2001;287-295.
2. Ivanenko L., Lange H., Heinrich A. Transport properties. Borisenko V.E. Semiconducting Silicides. Vol. 39:2000;243-297 Springer, Berlin.
3. C.B. Vining, Extrapolated thermoelectric figure of merit of ruthenium silicide, in: Proc. Symp. on Space Nuclear Power Systems, AJP Conf. Proc. 246 (1992) 338-342.
4. Arita Y., Miyagawa T., Matsui T. Proc. 17th Intern. Conf. on Thermoelectrics, IEEE: 1998;394.
5. Arita Y., Mitsuda S., Nishi Y., Matsui T., Nagasaki T. J. Nucl. Mater. 294:2001;202-205.
6. T. Ohta, C.B. Vining, C.E. Allevato, Characteristics of a promising new thermoelectric material: ruthenium silicide, in: Proc. of the 26th Intersociety Energy Conversion Engineering Conference, Vol. 3, American Nuclear Society, La Grange Park, IL, 1991, pp. 196-201.
7. Ohta T., Yamamoto A., Tanaka T., Sawade Y., Kamisako K., Horigome T. Progress in thermoelectric properties of undoped ruthenium sesquisilicide by HIP method. Proc. of the 12th International Conference on Thermoelectrics, Yokohama: 1993;393-396.
8. Yamamoto A., Ohta T., Sawade Y., Tanaka T., Kamisako K. Investigation of dopants for ruthenium silicide. Proc. of the 14th International Conference on Thermoelectrics, Ioffe-Institute, St. Petersburg: 1995;264-268.
9. 3), in: Proc. of the 27th Intersociety Energy Conversion Engineering Conference, Vol. 3, San Diego, CA, 1992, pp. 3.489-3.492.
10. 3 single crystals. J. Crystal Growth. 244:2002;296-304.
11. 3 single crystals. Appl. Surf. Sci. 73:1993;243-245.
12. 3. Rowe D.M. Proc. of the 10th International Conference on Thermoelectrics: 1991;167-173 Babrow Press, Cardiff.
13. 3. Acta Crystallogr. B. 30:1974;2692-2696.
14. Filonov A.B., Migas D.B., Shaposhnikov V.L., Dorozhkin N.N., Borisenko V.E., Heinrich A., Lange H. Electronic properties of isostructural ruthenium and osmium silicides and germanides. Phys. Rev. B. 60:1999;16494-16498.
15. 3. Phys. Stat. Sol. (b). 231:2002;71-180.
16. 3. Thin Solid Films. 364:2000;171-176.
17. 3. Phys. Rev. B. 55:1997;6918-6926.
18. Bonch-Bruevich V.L., Kalashnikov S.G. Semiconductor Physics. 1990;Nauka, Moscow.
19. Ridley B.K. Quantum Processes in Semiconductors. 1982;Clarendon Press, Oxford.