Role of oxygen vacancies in TiOx films in electronic structure at interface with an α-NPD layer

Organic Electronics

Volumn 27, Issue , 2015, Pages 247-252

  Sato, Mikio ^a   Tohkairin, Aoi ^a   Mase, Kazuhiko ^b,c   Kanai, Kaname ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

^c GRADUATE UNIVERSITY FOR ADVANCED STUDIES   (Japan)

Author keywords

Energy level alignment; Oxygen vacancy; TiOx buffer layer; NPD

Indexed keywords

BUFFER LAYERS; DENSITY FUNCTIONAL THEORY; DESIGN FOR TESTABILITY; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALS; OPTICAL WAVEGUIDES; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTOELECTROCHEMICAL CELLS; PHOTOELECTRON SPECTROSCOPY; PHOTOVOLTAIC CELLS; PRODUCT DEVELOPMENT; TITANIUM COMPOUNDS; VACANCIES;

ADSORBATE-SUBSTRATE INTERACTIONS; ENERGY LEVEL ALIGNMENT; EXTRACTION PROPERTIES; HOLE-TRANSPORTING MATERIALS; INVERSE PHOTOEMISSION SPECTROSCOPY; ORGANIC ELECTRONIC DEVICES; ORGANIC PHOTOVOLTAIC CELLS; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY;

OXYGEN VACANCIES;

EID: 84945561264     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2015.09.027     Document Type: Article

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