Versatile hole injection of VO2: Energy level alignment at N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine/VO2/fluorine-doped tin oxide

Organic Electronics

Volumn 16, Issue , 2015, Pages 133-138

  Kim, Hyein ^a   Lee, Jeihyun ^a   Park, Soohyung ^a   Jeong, Junkyeong ^a   Shin, Dongguen ^a   Yi, Yeonjin ^a   Kwon, Jung Dae ^b   Park, Jin Seong ^c  

^a Yonsei University   (South Korea)

^b Korea Institute of Material Science   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

Energy level alignment; Fluorine doped tin oxide (FTO); Hole injection barrier; UPS; Vanadium dioxide (VO2); XPS

Indexed keywords

ALIGNMENT; AMINES; ELECTRON INJECTION; ENERGY GAP; MOLECULAR ORBITALS; NANOCOMPOSITES; PHOTOELECTRON SPECTROSCOPY; TIN DIOXIDE; TIN OXIDES; VANADIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

CHARGE-GENERATION LAYERS; ENERGY LEVEL ALIGNMENT; FLUORINE DOPED TIN OXIDE; HIGHEST OCCUPIED MOLECULAR ORBITAL; HOLE INJECTION; HOLE INJECTION BARRIERS; HOLE INJECTION LAYERS;

CHARGE INJECTION;

EID: 84911366517     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2014.10.044     Document Type: Article

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