-
1
-
-
0037019294
-
Mechanism of hydrogen-induced crystallization of amorphous silicon
-
S. Sriraman, S. Agarwal, E.S. Aydil, and D. Maroudas Mechanism of hydrogen-induced crystallization of amorphous silicon Nature 418 6893 2002 62
-
(2002)
Nature
, vol.418
, Issue.6893
, pp. 62
-
-
Sriraman, S.1
Agarwal, S.2
Aydil, E.S.3
Maroudas, D.4
-
2
-
-
0033618561
-
Photovoltaic technology: The case for thin-film solar cells
-
A. Shah, P. Torres, R. Tscharner, N. Wyrsch, and H. Keppner Photovoltaic technology: the case for thin-film solar cells Science 285 1999 692
-
(1999)
Science
, vol.285
, pp. 692
-
-
Shah, A.1
Torres, P.2
Tscharner, R.3
Wyrsch, N.4
Keppner, H.5
-
3
-
-
0038107119
-
Material and solar cell research in microcrystalline silicon
-
A. Shah, J. Meier, E. Vallat-Sauvain, N. Wyrsch, U. Kroll, C. Droz, and U. Graf Material and solar cell research in microcrystalline silicon Sol. Energy Mater. Sol. Cells 73 1-4 2003 469
-
(2003)
Sol. Energy Mater. Sol. Cells
, vol.73
, Issue.1-4
, pp. 469
-
-
Shah, A.1
Meier, J.2
Vallat-Sauvain, E.3
Wyrsch, N.4
Kroll, U.5
Droz, C.6
Graf, U.7
-
4
-
-
77956115413
-
Nanocrystalline-silicon thin-film nonvolatile memory devices for display applications
-
S. Jung, and J. Yi Nanocrystalline-silicon thin-film nonvolatile memory devices for display applications IEEE Electron Device Lett. 31 9 2010 981
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.9
, pp. 981
-
-
Jung, S.1
Yi, J.2
-
5
-
-
33845936791
-
Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities
-
C.-H. Lee, A. Sazonov, A. Nathan, and J. Robertson Directly deposited nanocrystalline silicon thin-film transistors with ultra high mobilities Appl. Phys. Lett. 89 2006 252
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 252
-
-
Lee, C.-H.1
Sazonov, A.2
Nathan, A.3
Robertson, J.4
-
6
-
-
0001611361
-
Applied physics reviews applied physics reviews probing ultrafast carrier and phonon dynamics in semiconductors
-
A. Othonos Applied physics reviews applied physics reviews probing ultrafast carrier and phonon dynamics in semiconductors J. Appl. Phys. 83 4 1998 1789
-
(1998)
J. Appl. Phys.
, vol.83
, Issue.4
, pp. 1789
-
-
Othonos, A.1
-
7
-
-
0000977072
-
Time-resolved reflectivity measurements of femtosecond-optical-pulse-induced phase transitions in silicon
-
C. Shank, R. Yen, and C. Hirlimann Time-resolved reflectivity measurements of femtosecond-optical-pulse-induced phase transitions in silicon Phys. Rev. Lett. 50 1983 454
-
(1983)
Phys. Rev. Lett.
, vol.50
, pp. 454
-
-
Shank, C.1
Yen, R.2
Hirlimann, C.3
-
8
-
-
0037109887
-
Femtosecond pump-probe reflectivity study of silicon carrier dynamics
-
A. Sabbah, and D.M. Riffe Femtosecond pump-probe reflectivity study of silicon carrier dynamics Phys. Rev. B 66 16 2002 165217
-
(2002)
Phys. Rev. B
, vol.66
, Issue.16
, pp. 165217
-
-
Sabbah, A.1
Riffe, D.M.2
-
9
-
-
0028514525
-
Polarization of light scattered from slightly rough dielectric film
-
V. Freilikher, V.I. Tatarskii, M. Pustilnik, and I. Yurkevich Polarization of light scattered from slightly rough dielectric film Opt. Lett. 19 18 1994 1382
-
(1994)
Opt. Lett.
, vol.19
, Issue.18
, pp. 1382
-
-
Freilikher, V.1
Tatarskii, V.I.2
Pustilnik, M.3
Yurkevich, I.4
-
10
-
-
36749116256
-
Low temperature crystallization of doped aSI:H alloys
-
T. Hamasaki, H. Kurata, M. Hirose, and Y. Osaka Low temperature crystallization of doped aSI:H alloys Appl. Phys. Lett. 37 12 1980 1084
-
(1980)
Appl. Phys. Lett.
, vol.37
, Issue.12
, pp. 1084
-
-
Hamasaki, T.1
Kurata, H.2
Hirose, M.3
Osaka, Y.4
-
11
-
-
36549104969
-
Experimental determination of the nanocrystalline volume fraction in silicon thin films from Raman spectroscopy
-
E. Bustarret, M. Hachicha, and M. Brunel Experimental determination of the nanocrystalline volume fraction in silicon thin films from Raman spectroscopy Appl. Phys. Lett. 52 20 1988 1675
-
(1988)
Appl. Phys. Lett.
, vol.52
, Issue.20
, pp. 1675
-
-
Bustarret, E.1
Hachicha, M.2
Brunel, M.3
-
12
-
-
0033879621
-
Intrinsic microcrystalline silicon: A new material for photovoltaics
-
O. Vetterl, F. Finger, R. Carius, P. Hapke, L. Houben, O. Kluth, A. Lambertz, A. Mück, B. Rech, and H. Wagner Intrinsic microcrystalline silicon: a new material for photovoltaics Sol. Energy Mater. Sol. Cells 62 1 2000 97
-
(2000)
Sol. Energy Mater. Sol. Cells
, vol.62
, Issue.1
, pp. 97
-
-
Vetterl, O.1
Finger, F.2
Carius, R.3
Hapke, P.4
Houben, L.5
Kluth, O.6
Lambertz, A.7
Mück, A.8
Rech, B.9
Wagner, H.10
-
14
-
-
0001137387
-
Structural study of hydrogenated a-ge using extended x-ray absorption fine structure
-
C.E. Bouldin, E.A. Stern, B. von Roedern, and J. Azoulay Structural study of hydrogenated a-ge using extended x-ray absorption fine structure Phys. Rev. B 30 1984 4462
-
(1984)
Phys. Rev. B
, vol.30
, pp. 4462
-
-
Bouldin, C.E.1
Stern, E.A.2
Von Roedern, B.3
Azoulay, J.4
-
15
-
-
0032105305
-
Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growth
-
L. Houben, M. Luysberg, P. Hapke, R. Carius, F. Finger, and H. Wagner Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growth Philos. Mag. A 77 6 1998 1447
-
(1998)
Philos. Mag. A
, vol.77
, Issue.6
, pp. 1447
-
-
Houben, L.1
Luysberg, M.2
Hapke, P.3
Carius, R.4
Finger, F.5
Wagner, H.6
-
16
-
-
33745014234
-
Bestimmung der grösse und der inneren struktur von kolloidteilchen mittels röntgenstrahlen
-
P. Scherrer Bestimmung der grösse und der inneren struktur von kolloidteilchen mittels röntgenstrahlen Nachr. Ges. Wiss. Göttingen Math. Phys. Kl. 1918 1918 98
-
(1918)
Nachr. Ges. Wiss. Göttingen Math. Phys. Kl.
, vol.1918
, pp. 98
-
-
Scherrer, P.1
-
17
-
-
0001162210
-
The scherrer formula for x-ray particle size determination
-
A. Patterson The scherrer formula for x-ray particle size determination Phys. Rev. 56 10 1939 978
-
(1939)
Phys. Rev.
, vol.56
, Issue.10
, pp. 978
-
-
Patterson, A.1
-
18
-
-
25944452908
-
Optical properties of crystalline semiconductors and dielectrics
-
A. Forouhi, and I. Bloomer Optical properties of crystalline semiconductors and dielectrics Phys. Rev. B 38 3 1988 1865
-
(1988)
Phys. Rev. B
, vol.38
, Issue.3
, pp. 1865
-
-
Forouhi, A.1
Bloomer, I.2
-
19
-
-
0009260463
-
Optical dispersion relations for amorphous semiconductors and amorphous dielectrics
-
A. Forouhi, and I. Bloomer Optical dispersion relations for amorphous semiconductors and amorphous dielectrics Phys. Rev. B 34 10 1986 7018
-
(1986)
Phys. Rev. B
, vol.34
, Issue.10
, pp. 7018
-
-
Forouhi, A.1
Bloomer, I.2
-
20
-
-
79952745546
-
Stieltjes representation of the 3D Bruggeman effective medium and padé approximation
-
D. Zhang, E. Cherkaev, and M.P. Lamoureux Stieltjes representation of the 3D Bruggeman effective medium and padé approximation Appl. Math. Comput. 217 17 2011 7092
-
(2011)
Appl. Math. Comput.
, vol.217
, Issue.17
, pp. 7092
-
-
Zhang, D.1
Cherkaev, E.2
Lamoureux, M.P.3
-
22
-
-
0042045277
-
-
Pearson Education
-
E. Hecht Optics 2012 Pearson Education
-
(2012)
Optics
-
-
Hecht, E.1
-
23
-
-
84867539312
-
Enhanced carrier-carrier interaction in optically pumped hydrogenated nanocrystalline silicon
-
T.W. Roger, W. He, I.V. Yurkevich, and A. Kaplan Enhanced carrier-carrier interaction in optically pumped hydrogenated nanocrystalline silicon Appl. Phys. Lett. 101 14 2012 141904
-
(2012)
Appl. Phys. Lett.
, vol.101
, Issue.14
, pp. 141904
-
-
Roger, T.W.1
He, W.2
Yurkevich, I.V.3
Kaplan, A.4
-
24
-
-
0001117230
-
Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a-Si:H
-
A. Esser, H. Heesel, H. Kurz, C. Wang, G. Parsons, and G. Lucovsky Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a-Si:H J. Appl. Phys. 73 3 1993 1235
-
(1993)
J. Appl. Phys.
, vol.73
, Issue.3
, pp. 1235
-
-
Esser, A.1
Heesel, H.2
Kurz, H.3
Wang, C.4
Parsons, G.5
Lucovsky, G.6
-
25
-
-
0001058912
-
Generation of dense electron-hole plasmas in silicon
-
K. Sokolowski-Tinten, and D. Von der Linde Generation of dense electron-hole plasmas in silicon Phys. Rev. B 61 4 2000 2643
-
(2000)
Phys. Rev. B
, vol.61
, Issue.4
, pp. 2643
-
-
Sokolowski-Tinten, K.1
Von Der Linde, D.2
-
26
-
-
84920054259
-
Determination of excitation profile and dielectric function spatial nonuniformity in porous silicon by using WKB approach
-
W. He, I.V. Yurkevich, L.T. Canham, A. Loni, and A. Kaplan Determination of excitation profile and dielectric function spatial nonuniformity in porous silicon by using WKB approach Opt. Express 22 22 2014 27123
-
(2014)
Opt. Express
, vol.22
, Issue.22
, pp. 27123
-
-
He, W.1
Yurkevich, I.V.2
Canham, L.T.3
Loni, A.4
Kaplan, A.5
-
27
-
-
33646435595
-
Efficient vacuum ultraviolet light frequency downconversion by thin films of CdSe quantum dots
-
A. Kaplan, A. Sajwani, Z. Li, R. Palmer, and J. Wilcoxon Efficient vacuum ultraviolet light frequency downconversion by thin films of CdSe quantum dots Appl. Phys. Lett. 88 2006 17105
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 17105
-
-
Kaplan, A.1
Sajwani, A.2
Li, Z.3
Palmer, R.4
Wilcoxon, J.5
-
28
-
-
84863312314
-
Resolving the ultrafast dynamics of charge carriers in nanocomposites
-
J. Barreto, T. Roger, and A. Kaplan Resolving the ultrafast dynamics of charge carriers in nanocomposites Appl. Phys. Lett. 100 24 2012 241906
-
(2012)
Appl. Phys. Lett.
, vol.100
, Issue.24
, pp. 241906
-
-
Barreto, J.1
Roger, T.2
Kaplan, A.3
-
29
-
-
0000572650
-
Kinetics of high-density plasmas generated in Si by 1060 and 530 nm picosecond laser pulses
-
H.M. van Driel Kinetics of high-density plasmas generated in Si by 1060 and 530 nm picosecond laser pulses Phys. Rev. B 35 15 1987 8166
-
(1987)
Phys. Rev. B
, vol.35
, Issue.15
, pp. 8166
-
-
Van Driel, H.M.1
-
30
-
-
0000603364
-
Ultrafast heating of silicon on sapphire by femtosecond optical pulses
-
M.C. Downer, and C.V. Shank Ultrafast heating of silicon on sapphire by femtosecond optical pulses Phys. Rev. Lett. 56 1986 761
-
(1986)
Phys. Rev. Lett.
, vol.56
, pp. 761
-
-
Downer, M.C.1
Shank, C.V.2
-
31
-
-
0000933827
-
Conductivity relaxation time due to electron-hole collisions in optically excited semiconductors
-
M. Combescot, and R. Combescot Conductivity relaxation time due to electron-hole collisions in optically excited semiconductors Phys. Rev. B 35 1987 7986
-
(1987)
Phys. Rev. B
, vol.35
, pp. 7986
-
-
Combescot, M.1
Combescot, R.2
|