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Volumn 87, Issue 4, 2015, Pages

Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation

(1) Amano, Hiroshi a

a NAGOYA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISPLAY DEVICES; ELECTRONS; LIGHT EMITTING DIODES; SAPPHIRE; TELEVISION SYSTEMS; TEMPERATURE;

BLUE LEDS; DISPLAY SYSTEM; GROWTH OF GAN; LOW ENERGY ELECTRON BEAM IRRADIATION; LOW TEMPERATURES; P-TYPE GAN; PERSONAL HISTORY; SAPPHIRE SUBSTRATES;

GALLIUM NITRIDE;

EID: 84943764511 PISSN: 00346861 EISSN: 15390756 Source Type: Journal
DOI: 10.1103/RevModPhys.87.1133 Document Type: Article

Times cited : (111)

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