Amorphous Ge quantum dots embedded in crystalline Si: ab initio results

Journal of Physics Condensed Matter

Volumn 27, Issue 40, 2015, Pages

  Laubscher, M ^a   Kufner S ^a   Kroll, P ^b   Bechstedt, F ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

Author keywords

amorphousness; density functional theory; heterostructures; nanodots

Indexed keywords

COMPUTATIONAL GEOMETRY; CRYSTALLINE MATERIALS; DENSITY FUNCTIONAL THEORY; GERMANIUM; HETEROJUNCTIONS; NANOCRYSTALS; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; SILICON;

AB INITIO DENSITY FUNCTIONAL THEORIES (DFT); ABSORPTION PEAKS; AMORPHOUSNESS; ELECTRONIC AND OPTICAL PROPERTIES; MID-INFRARED SPECTRAL REGIONS; NANODOTS; SPIN ORBIT INTERACTIONS; STRUCTURE MODELING;

AMORPHOUS SILICON;

EID: 84943338692     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/27/40/405302     Document Type: Article

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