Aluminum oxide tunnel barriers for single electron memory devices

Microelectronics Journal

Volumn 36, Issue 3-6, 2005, Pages 272-276

  Yadavalli, Kameshwar K ^a   Orlov, Alexei O ^a   Snider, Gregory L ^a   Elam, Jeffrey ^b  

^a University of Notre Dame   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

ALD; Aluminum oxide; Plasma oxidation; Single electron memory

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC PHYSICS; ELECTRON TUNNELING; OXIDATION; PLASMAS;

ALD; ALUMINUM OXIDE; PLASMA OXIDATION; SINGLE ELECTRON MEMORY;

ELECTRON DEVICES;

EID: 33644516921     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.02.024     Document Type: Conference Paper

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