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Volumn 11, Issue 37, 2015, Pages 4829-4836

Surface Transfer Doping-Induced, High-Performance Graphene/Silicon Schottky Junction-Based, Self-Powered Photodetector

Author keywords

Gr Si; MoO3< inf>; photodetecting performance; photodetectors; Schottky junctions; surface transfer doping

Indexed keywords

ELECTRIC RESISTANCE; PHOTONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SURFACE TREATMENT;

EID: 84942843415     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.201501298     Document Type: Article
Times cited : (110)

References (51)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.