Atomic layer deposition of MoS2 thin films

Materials Research Express

Volumn 2, Issue 3, 2015, Pages

  Browning, Robert ^a   Padigi, Prasanna ^b   Solanki, Raj ^a,b   Tweet, Douglas J ^c   Schuele, Paul ^c   Evans, David ^c  

^a PORTLAND STATE UNIVERSITY   (United States)

^b Department of Electrical and Computer Engineering   (United States)

^c SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

2D transition metal chalcogenides; Atomic layered deposition; MoS2; Transistor

Indexed keywords

ATOMS; ELECTRIC FIELD EFFECTS; FIELD EFFECT TRANSISTORS; INORGANIC COMPOUNDS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; OXIDE FILMS; SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; THIN FILMS; TRANSISTORS; TRANSITION METALS; X RAY PHOTOELECTRON SPECTROSCOPY;

AS-GROWN FILMS; CONTINUOUS FILMS; ELECTRICAL CHARACTERISTIC; HIGH QUALITY; LAYERED DEPOSITION; MOS2; TEMPERATURE RANGE; TRANSITION METAL CHALCOGENIDES;

ATOMIC LAYER DEPOSITION;

EID: 84941297110     PISSN: None     EISSN: 20531591     Source Type: Journal    
DOI: 10.1088/2053-1591/2/3/035006     Document Type: Article

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