First principle simulations of piezotronic transistors

Nano Energy

Volumn 14, Issue , 2015, Pages 355-363

  Liu, Wei ^a   Zhang, Aihua ^a   Zhang, Yan ^a,b   Lin Wang, Zhong ^a,c  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b LANZHOU UNIVERSITY   (China)

^c Georgia Institute of Technology   (United States)

Author keywords

First principle simulations; Modulation of Schottky barriers; Piezotronic transistor; Width of piezoelectric charge distribution

Indexed keywords

CHARGE DISTRIBUTION; DENSITY FUNCTIONAL THEORY; MODULATION; PIEZOELECTRICITY; POISSON DISTRIBUTION; POISSON EQUATION; QUANTUM THEORY; SCHOTTKY BARRIER DIODES; SILVER; ZINC OXIDE; ZINC SULFIDE;

DENSITY FUNCTION THEORY; ELECTRONIC TRANSPORT; FIRST PRINCIPLE SIMULATION; PIEZOELECTRIC CHARGE; PIEZOELECTRIC POLARIZATIONS; PIEZOELECTRIC SEMICONDUCTORS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS;

TRANSISTORS;

EID: 84940557690     PISSN: 22112855     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nanoen.2014.10.014     Document Type: Article

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