Low-temperature Ohmic contact formation in GaN high electron mobility transistors using microwave annealing

IEEE Electron Device Letters

Volumn 36, Issue 9, 2015, Pages 896-898

  Zhang, Lin Qing ^a   Shi, Jin Shan ^a   Huang, Hong Fan ^a   Liu, Xiao Yong ^a   Zhao, Sheng Xun ^a   Wang, Peng Fei ^a   Zhang, David Wei ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

low temperature; mic contact; microwave annealing (MWA); surface morphology

Indexed keywords

ANNEALING; ELECTRIC CONTACTORS; ELECTRON MOBILITY; GALLIUM NITRIDE; LEAKAGE CURRENTS; MICROWAVE HEATING; MICROWAVES; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SURFACE MORPHOLOGY; TEMPERATURE;

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; LOW TEMPERATURE CONDITIONS; LOW TEMPERATURE MICROWAVES; LOW TEMPERATURES; MICROWAVE ANNEALING; OHMIC CONTACT FORMATION; RAPID THERMAL ANNEALING (RTA);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84940387386     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2015.2461545     Document Type: Article

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