Accumulation-based computing using phase-change memories with FET access devices

IEEE Electron Device Letters

Volumn 36, Issue 9, 2015, Pages 975-977

  Hosseini, Peiman ^a   Sebastian, Abu ^b   Papandreou, Nikolaos ^b   Wright, C David ^c   Bhaskaran, Harish ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b IBM RESEARCH ZURICH   (Switzerland)

^c UNIVERSITY OF EXETER   (United Kingdom)

Author keywords

neuromorphic computing; non von Neumann; phase change materials

Indexed keywords

PHASE CHANGE MEMORY;

ACCESS DEVICES; NEUMANN; NEUROMORPHIC COMPUTING; PHASE CHANGE MEMORY (PCM); UNCONVENTIONAL COMPUTING;

PHASE CHANGE MATERIALS;

EID: 84940381639     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2015.2457243     Document Type: Article

References (12)

1. C. D. Wright, P. Hosseini, and J. A. V. Diosdado, Beyond von-Neumann computing with nanoscale phase-change memory devices, Adv. Funct. Mater., vol. 23, no. 18, pp. 2248-2254, May 2013.
2. S. B. Eryilmaz et al., Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array, Frontiers Neurosci., vol. 8, p. 205, Jul. 2014.
3. O. Bichler et al., Visual pattern extraction using energy-efficient 2-PCM synapse neuromorphic architecture, IEEE Trans. Electron Devices, vol. 59, no. 8, pp. 2206-2214, Aug. 2012.
4. G. W. Burr et al., Experimental demonstration and tolerancing of a large-scale neural network (165, 000 synapses), using phase-change memory as the synaptic weight element, in Proc. IEEE Int. Electron. Devices Meeting (IEDM), Dec. 2014, pp. 29. 5. 1-29. 5. 4.
5. D. Kuzum et al., Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing, Nano Lett., vol. 12, no. 5, pp. 2179-2186, Jun. 2011.
6. S. R. Ovshinsky and B. Pashmakov, Innovation providing new multiple functions in phase-change materials to achieve cognitive computing, MRS Proc., vol. 803, p. HH1. 1, doi: 10. 1557/PROC-803-HH1. 1.
7. M. Cassinerio, N. Ciocchini, and D. Ielmini, Logic computation in phase change materials by threshold and memory switching, Adv. Mater., vol. 25, no. 41, pp. 5975-5980, Nov. 2013.
8. M. Breitwisch et al., Novel lithography-independent pore phase change memory, Symp. VLSI Technol., Dig. Tech. Papers, Jun. 2007, pp. 100-101.
9. G. W. Burr et al., Access devices for 3D crosspoint memory, J. Vac. Sci. Technol. B, vol. 32, no. 4, p. 040802, Jul. 2014.
10. A. Sebastian, M. Le Gallo, and D. Krebs, Crystal growth within a phase change memory cell, Nature Commun., vol. 5, Jul. 2014, Art. ID 4314.
11. N. Papandreou et al., Drift-resilient cell-state metric for multilevel phase-change memory, in Proc. IEEE Int. Electron Devices Meeting (IEDM), Dec. 2011, pp. 3. 5. 1-3. 5. 4.
12. A. Sebastian et al., A collective relaxation model for resistance drift in phase change memory cells, in Proc. IEEE Int. Rel. Phys. Symp. (IRPS), Apr. 2015, pp. MY. 5. 1-MY. 5. 6.