A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis

ACS Nano

Volumn 9, Issue 8, 2015, Pages 8352-8360

  Park, Beomjin ^a   Park, Jaesung ^b,c,d   Son, Jin Gyeong ^d,e,f   Kim, Yong Jin ^b,c   Yu, Seong Uk ^a,g   Park, Hyo Ju ^g   Chae, Dong Hun ^d   Byun, Jinseok ^a   Jeon, Gumhye ^a   Huh, Sung ^e,f   Lee, Seoung Ki ^h   Mishchenko, Artem ^c   Hyun, Seung ^a   Lee, Tae Geol ^d   Han, Sang Woo ^e,f   Ahn, Jong Hyun ^h   Lee, Zonghoon ^g   Hwang, Chanyong ^d   Novoselov, Konstantin S ^c   Kim, Kwang S ^g   Hong, Byung Hee ^b   Kim, Jin Kon ^a   more..

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Seoul National University   (South Korea)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

^d Korea Research Institute of Standards and Science   (South Korea)

^e Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^f Institute for Basic Science   (South Korea)

^g Ulsan National Institute of Science and Technology   (South Korea)

^h Yonsei University   (South Korea)

Author keywords

amorphous carbon; bottom up growth; graphene; graphene growth from polymer; graphene based heterostructure

Indexed keywords

AMORPHOUS CARBON; CHEMICAL VAPOR DEPOSITION; CROSSLINKING; HETEROJUNCTIONS; METAL INSULATOR BOUNDARIES; POLYSTYRENES; QUANTUM HALL EFFECT;

BOTTOM UP; CHEMICAL VAPOR DEPOSITION METHODS; CROSS-LINKED POLYSTYRENE; ELECTRICAL RESISTANCES; GRAPHENE GROWTH; ONE-POT SYNTHESIS; ORDERS OF MAGNITUDE; PHOTOCROSS-LINKING;

GRAPHENE;

EID: 84940121912     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b03037     Document Type: Article

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