Investigation of the influence on graphene by using electron-beam and photo-lithography

Solid State Communications

Volumn 151, Issue 21, 2011, Pages 1574-1578

  Fan, Jiyu ^a,b   Michalik, J M ^a   Casado, L ^a   Roddaro, S ^a,c   Ibarra, M R ^a   De Teresa, J M ^a  

^a UNIVERSITY OF ZARAGOZA   (Spain)

^b NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^c ISTITUTO NANOSCIENZE CNR   (Italy)

Author keywords

A. Graphene; B. Nanofabrications; C. Raman spectra; D. Disorder effects

Indexed keywords

A. GRAPHENE; ANNEALING PROCESS; B. NANOFABRICATIONS; D. DISORDER EFFECTS; IMPURITIES IN; LITHOGRAPHY PROCESS; RAMAN PEAK;

ACETONE; GRAPHENE; PHOTOSENSITIVITY; RAMAN SCATTERING; RAMAN SPECTROSCOPY;

LITHOGRAPHY;

EID: 80053251948     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.07.028     Document Type: Article

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