-
1
-
-
84864271098
-
Die singulation technologies for advanced packaging: A critical review
-
Jul.
-
W.-S. Lei, A. Kumar, and R. Yalamanchili, "Die singulation technologies for advanced packaging: A critical review, " J. Vac. Sci. Technol. B, vol. 30, Jul. 2012, Art. ID 040801.
-
(2012)
J. Vac. Sci. Technol. B
, vol.30
-
-
Lei, W.-S.1
Kumar, A.2
Yalamanchili, R.3
-
2
-
-
33846295889
-
Packaging: Past, present and future
-
Shenzhen, China
-
R. R. Tummala, "Packaging: Past, present and future, " in Proc. 6th Int. Conf. Electron. Packag. Technol., Shenzhen, China, 2005, pp. 3-7.
-
(2005)
Proc. 6th Int. Conf. Electron. Packag. Technol.
, pp. 3-7
-
-
Tummala, R.R.1
-
3
-
-
0344430186
-
Laser micromachining in the microelectronics industry: Emerging applications
-
Oct.
-
P. K. Subrahmanyan, "Laser micromachining in the microelectronics industry: Emerging applications, " Proc. SPIE, vol. 4977, p. 188, Oct. 2003.
-
(2003)
Proc. SPIE
, vol.4977
, pp. 188
-
-
Subrahmanyan, P.K.1
-
5
-
-
34547788106
-
Internal modified-layer formation mechanism into silicon with nanosecond laser
-
E. Ohmura, F. Fukuyo, K. Fukumitsu, and H. Morita, "Internal modified-layer formation mechanism into silicon with nanosecond laser, " J. Achieve. Mater. Manuf. Eng., vol. 17, nos. 1-2, pp. 381-384, 2006.
-
(2006)
J. Achieve. Mater. Manuf. Eng.
, vol.17
, Issue.1-2
, pp. 381-384
-
-
Ohmura, E.1
Fukuyo, F.2
Fukumitsu, K.3
Morita, H.4
-
6
-
-
34547769226
-
Advanced dicing technology for semiconductor wafer-Stealth dicing
-
Aug.
-
M. Kumagai et al., "Advanced dicing technology for semiconductor wafer-Stealth dicing, " IEEE Trans. Semicond. Manuf., vol. 20, no. 3, pp. 259-265, Aug. 2007.
-
(2007)
IEEE Trans. Semicond. Manuf.
, vol.20
, Issue.3
, pp. 259-265
-
-
Kumagai, M.1
-
7
-
-
77954703912
-
Analysis of processing mechanism in stealth dicing of ultra-thin silicon wafer
-
E. Ohmura et al., "Analysis of processing mechanism in stealth dicing of ultra-thin silicon wafer, " J. Adv. Mech. Design Syst. Manuf., vol. 2, no. 4, pp. 540-549, 2008.
-
(2008)
J. Adv. Mech. Design Syst. Manuf.
, vol.2
, Issue.4
, pp. 540-549
-
-
Ohmura, E.1
-
8
-
-
84964272864
-
Thermo-elastic-plastic analysis on internal processing phenomena of single-crystal silicon by nanosecond laser
-
T. Monodane et al., "Thermo-elastic-plastic analysis on internal processing phenomena of single-crystal silicon by nanosecond laser, " J. Laser Micro/Nanoeng., vol. 1, no. 3, pp. 231-235, 2006.
-
(2006)
J. Laser Micro/Nanoeng.
, vol.1
, Issue.3
, pp. 231-235
-
-
Monodane, T.1
-
9
-
-
50149105000
-
The mechanism of semiconductor wafer dicing by stealth dicing technology
-
Kyoto, Japan May
-
K. Fukumitsu et al., "The mechanism of semiconductor wafer dicing by stealth dicing technology, " in Proc. 4th Int. Congr. Laser Adv. Mater. Process. (LAMP), Kyoto, Japan, May 2006, pp. #06-124.
-
(2006)
Proc. 4th Int. Congr. Laser Adv. Mater. Process. (LAMP)
, pp. 06-124
-
-
Fukumitsu, K.1
-
10
-
-
56749131036
-
The stealth dicing technologies and their applications
-
Williamsburg, VA, USA Apr.
-
K. Fukuyo, K. Fukumitsu, and N. Uchiyama, "The stealth dicing technologies and their applications, " in Proc. 6th Int. Symp. Laser Proc. Micofabricat. (LPM), Williamsburg, VA, USA, Apr. 2005, pp. 322-328.
-
(2005)
Proc. 6th Int. Symp. Laser Proc. Micofabricat. (LPM)
, pp. 322-328
-
-
Fukuyo, K.1
Fukumitsu, K.2
Uchiyama, N.3
-
11
-
-
70549098732
-
Development of wafer thinning and dicing technology for thin wafer
-
San Francisco, CA, USA
-
C. Miyazaki, H. Shimamoto, T. Uematsu, and Y. Abe, "Development of wafer thinning and dicing technology for thin wafer, " in Proc. IEEE 3DIC, San Francisco, CA, USA, 2009, pp. 1-4.
-
(2009)
Proc. IEEE 3DIC
, pp. 1-4
-
-
Miyazaki, C.1
Shimamoto, H.2
Uematsu, T.3
Abe, Y.4
-
12
-
-
84929353198
-
Multi-strata subsurface laser die singulation to enable defect-free ultra-thin stacked memory dies
-
W. H. Teh, D. Boning, and R. Welsch, "Multi-strata subsurface laser die singulation to enable defect-free ultra-thin stacked memory dies, " AIP Adv., vol. 5, no. 5, 2015, Art. ID 057128.
-
(2015)
AIP Adv
, vol.5
, Issue.5
-
-
Teh, W.H.1
Boning, D.2
Welsch, R.3
-
13
-
-
84938808151
-
Multi-strata subsurface laser modified microstructure with backgrind-assisted controlled fracture for defect-free ultra-thin die fabrication
-
to be published
-
W. H. Teh, D. Boning, and R. Welsch, "Multi-strata subsurface laser modified microstructure with backgrind-assisted controlled fracture for defect-free ultra-thin die fabrication, " IEEE Trans. Compon. Packag. Manuf. Technol., to be published.
-
IEEE Trans. Compon. Packag. Manuf. Technol
-
-
Teh, W.H.1
Boning, D.2
Welsch, R.3
-
14
-
-
0018441843
-
Temperature dependence of the optical properties of silicon
-
H. A. Weakliem and D. Redfield, "Temperature dependence of the optical properties of silicon, " J. Appl. Phys., vol. 50, no. 3, p. 1491, 1979.
-
(1979)
J. Appl. Phys.
, vol.50
, Issue.3
, pp. 1491
-
-
Weakliem, H.A.1
Redfield, D.2
-
15
-
-
0029306789
-
Optical properties of intrinsic silicon at 300 K
-
M. A. Green and M. J. Keevers, "Optical properties of intrinsic silicon at 300 K, " Progr. Photovolt. Res. Appl., vol. 3, no. 3, pp. 189-192, 1995.
-
(1995)
Progr. Photovolt. Res. Appl.
, vol.3
, Issue.3
, pp. 189-192
-
-
Green, M.A.1
Keevers, M.J.2
-
16
-
-
50249182780
-
Measurement of temperature dependence of absorption coefficient of single crystal silicon
-
F. Fukuyo, E. Ohmura, K. Fukumitsu, and H. Morita, "Measurement of temperature dependence of absorption coefficient of single crystal silicon, " J. Jpn. Laser Process. Soc., vol. 14, no. 1, pp. 24-29, 2007.
-
(2007)
J. Jpn. Laser Process. Soc.
, vol.14
, Issue.1
, pp. 24-29
-
-
Fukuyo, F.1
Ohmura, E.2
Fukumitsu, K.3
Morita, H.4
-
17
-
-
36549094807
-
Measurements of the optical properties of liquid silicon and germanium using nanosecond timeresolved ellipsometry
-
G. E. Jellison, Jr., and D. H. Lowndes, "Measurements of the optical properties of liquid silicon and germanium using nanosecond timeresolved ellipsometry, " Appl. Phys. Lett., vol. 51, no. 5, pp. 352-354, 1987.
-
(1987)
Appl. Phys. Lett.
, vol.51
, Issue.5
, pp. 352-354
-
-
Jellison, G.E.1
Lowndes, D.H.2
-
18
-
-
84938793664
-
JSME data Book: Heat transfer, 4th ed
-
Tokyo, Japan
-
JSME Data Book: Heat Transfer, 4th ed., Soc. Mech. Eng., Tokyo, Japan, 1986.
-
(1986)
Soc. Mech. Eng
-
-
-
19
-
-
0003432018
-
Thermophysical properties of matter-The TPRC data series
-
Thermal conductivity-Metallic elements and alloys West Lafayette, IN, USA, Tech. Rep.
-
Y. S. Touloukian, R. W. Powell, C. Y. Ho, and P. G. Klemens, "Thermophysical properties of matter-The TPRC data series. Volume 1. Thermal conductivity-Metallic elements and alloys, " Thermophys. Electron. Prop. Inf. Anal. Center, West Lafayette, IN, USA, Tech. Rep., 1970.
-
(1970)
Thermophys. Electron. Prop. Inf. Anal. Center
, vol.1
-
-
Touloukian, Y.S.1
Powell, R.W.2
Ho, C.Y.3
Klemens, P.G.4
-
20
-
-
84938806617
-
-
Laser and Backgrinding Applications Tokyo Japan
-
Laser and Backgrinding Applications, DISCO Corp., Tokyo, Japan, 2013.
-
(2013)
DISCO Corp
-
-
-
21
-
-
0037794568
-
Directional anisotropy in the cleavage fracture of silicon
-
R. Pérez and P. Gumbsch, "Directional anisotropy in the cleavage fracture of silicon, " Phys. Rev. Lett., vol. 84, no. 23, p. 5347, 2000.
-
(2000)
Phys. Rev. Lett.
, vol.84
, Issue.23
, pp. 5347
-
-
Pérez, R.1
Gumbsch, P.2
-
22
-
-
0038786031
-
An ab initio study of the cleavage anisotropy in silicon
-
R. Pérez and P. Gumbsch, "An ab initio study of the cleavage anisotropy in silicon, " Acta Mater., vol. 48, no. 18, pp. 4517-4530, 2000.
-
(2000)
Acta Mater
, vol.48
, Issue.18
, pp. 4517-4530
-
-
Pérez, R.1
Gumbsch, P.2
|