Reducing interface recombination for Cu(In,Ga)Se2 by atomic layer deposited buffer layers

Applied Physics Letters

Volumn 107, Issue 3, 2015, Pages

  Hultqvist, Adam ^a   Li, Jian V ^b   Kuciauskas, Darius ^b   Dippo, Patricia ^b   Contreras, Miguel A ^b   Levi, Dean H ^b   Bent, Stacey F ^a  

^a Stanford University   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; CADMIUM SULFIDE; CAPACITANCE; COPPER ALLOYS; CYANIDES; GALLIUM ALLOYS; II-VI SEMICONDUCTORS; INDIUM ALLOYS; INTERFACE STATES; SEMICONDUCTOR ALLOYS; TIN COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE; ZINC SULFIDE;

ANALYSIS TECHNIQUES; ATOMIC LAYER DEPOSITED; BUFFER LAYER DEPOSITION; CAPACITANCE VOLTAGE; INTERFACE FORMATION; INTERFACE RECOMBINATION; INTERFACE STATE DENSITY; SURFACE RECOMBINATION VELOCITIES;

BUFFER LAYERS;

EID: 84937469332     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4927096     Document Type: Article

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