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Volumn , Issue , 2013, Pages 849-852

Achievement of 19.7% efficiency with a small-sized Cu(InGa)(SeS) 2 solar cells prepared by sulfurization after selenizaion process with Zn-based buffer

Author keywords

19.7 ; Band gap; CIS; EQE spectrum; Solar Frontier; Submodule; Zn(O, S, OH)x buffer layer

Indexed keywords

BUFFER LAYERS; CONVERSION EFFICIENCY; ENERGY GAP; GALLIUM; ZINC;

EID: 84896474201     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2013.6744278     Document Type: Conference Paper
Times cited : (64)

References (7)
  • 7
    • 40749107425 scopus 로고    scopus 로고
    • Intrinsic DX centers in ternary chalcopyrite semiconductors
    • S. Lany and A. Zunger, "Intrinsic DX centers in ternary chalcopyrite semiconductors", Phys. Rev. Lett., 100, 016401, 2008
    • (2008) Phys. Rev. Lett. , vol.100 , pp. 016401
    • Lany, S.1    Zunger, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.