Influence of an Sb doping layer in CIGS thin-film solar cells: A photoluminescence study

Journal of Physics D: Applied Physics

Volumn 47, Issue 4, 2014, Pages

  Puyvelde, L Van ^a   Lauwaert, J ^a   Pianezzi, F ^b   Nishiwaki, S ^b   Smet, P F ^a   Poelman, D ^a   Tiwari, A N ^b   Vrielinck, H ^a  

^a GHENT UNIVERSITY   (Belgium)

^b SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

Author keywords

Cu(ln,Ga)Se2; Defects; Photoluminescence

Indexed keywords

ANNEALING TEMPERATURES; CIGS SOLAR CELLS; DONOR-ACCEPTOR PAIRS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; MANUFACTURING COST; SODA LIME GLASS SUBSTRATE; SUBSTRATE TEMPERATURE; THIN-FILM SOLAR CELLS;

DEFECTS; DEPOSITION; DOPING (ADDITIVES); ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM; PHOTOLUMINESCENCE; SUBSTRATES;

SOLAR CELLS;

EID: 84892390472     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/4/045102     Document Type: Article

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