Influence of Cu(In,Ga)(Se,S)2 surface treatments on the properties of 30 x 30 cm2 large areamodules with atomic layer deposited Zn(O,S) buffers

Thin Solid Films

Volumn 574, Issue , 2015, Pages 28-31

  Merdes, S ^a   Steigert, A ^a   Ziem, F ^a   Lauermann, I ^a   Klenk, R ^a   Hergert, F ^b   Kaufmann, C A ^a   Schlatmann, R ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b Bosch Solar CISTech GmbH   (Germany)

Author keywords

Atomic layer deposition; Cu(In,Ga)(Se,S)2Zn(O,S); Sequential process

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; GALLIUM; OPEN CIRCUIT VOLTAGE; ZINC;

APERTURE EFFICIENCY; ATOMIC LAYER DEPOSITED; CU(IN ,GA)(SE ,S)2; LARGE AREA MODULE; METASTABILITIES; SEQUENTIAL PROCESS; SOLUTION TREATMENTS; ZN(O ,S);

SURFACE TREATMENT;

EID: 84921303199     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.11.049     Document Type: Article

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