Degradation mechanism of hydrogen-terminated porous silicon in the presence and in the absence of light

AIP Advances

Volumn 5, Issue 6, 2015, Pages

  Xu, Hangzhou ^a   Pei, Haiyan ^a,b   Xiao, Hongdi ^a   Hu, Wenrong ^a,b  

^a SHANDONG UNIVERSITY   (China)

^b Shandong Provincial Engineering Center on Environmental Science and Technology   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AZO DYES; DEGRADATION; ENERGY GAP; FREE RADICALS; HYDROGEN; MOLECULES; PHOTODEGRADATION; PRASEODYMIUM COMPOUNDS; SEMICONDUCTING SILICON;

BAND GAP ENERGY; DEGRADATION MECHANISM; DEGRADATION OF METHYL ORANGES; HYDROGEN TRANSFER; OXYGEN MOLECULE; PHOTOGENERATED ELECTRONS; PHOTOGENERATED HOLES; WIDE BAND GAP;

POROUS SILICON;

EID: 84934956159     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4922510     Document Type: Article

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