Boron nitride materials: An overview from 0D to 3D (nano)structures

Wiley Interdisciplinary Reviews: Computational Molecular Science

Volumn 5, Issue 4, 2015, Pages 299-309

  Arenal, Raul ^a,b   Lopez Bezanilla, Alejandro ^c  

^a UNIVERSITY OF ZARAGOZA   (Spain)

^b FUNDACIÓN ARAID   (Spain)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; ELECTRONIC PROPERTIES; ELECTRONICS INDUSTRY; ENERGY GAP; GRAPHENE; III-V SEMICONDUCTORS; NANOCRYSTALLINE MATERIALS; NANOELECTRONICS; NANOTUBES; NITRIDES; OXIDATION RESISTANCE;

CRYSTALLINE PHASIS; ELECTRONIC BAND GAPS; ELECTRONIC DEVICE; EXTREME CONDITIONS; HIGH QUALITY; MASSIVE PRODUCTION; NITRIDE MATERIALS; PHYSICAL AND CHEMICAL PROPERTIES;

C (PROGRAMMING LANGUAGE);

EID: 84931956553     PISSN: 17590876     EISSN: 17590884     Source Type: Journal    
DOI: 10.1002/wcms.1219     Document Type: Article

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