Temperature dependence of Henry factor of Undoped and p-doped InAs/GaAs Quantum-Dot Lasers emitting at 1.3 μm

2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007

Volumn , Issue , 2007, Pages

  Cong, D Y ^a   Martinez, A ^a   Merghem, K ^a   Ramdane, A ^a   Provost, J G ^a   Fischer, M ^b   Krestnikov, I ^c   Kovsh, A ^d  

^a UNIV PARIS SUD   (France)

^b NOKIA RESEARCH CENTER   (United States)

^c NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH   (Germany)

^d INNOLUME GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; INDIUM ARSENIDE; OPTICAL COMMUNICATION; PHOSPHORUS; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE DISTRIBUTION;

DOPED DEVICES; HENRY-FACTOR; INAS/GAAS; P-TYPE; QD LASERS; TEMPERATURE DEPENDENCE; TEMPERATURE-INSENSITIVE;

QUANTUM DOT LASERS;

EID: 84931069693     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ic:20070315     Document Type: Conference Paper

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