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Volumn 5, Issue 54, 2015, Pages 43810-43814

Ab initio strain engineering of graphene: Opening bandgaps up to 1 eV

(2) Kerszberg, Nicolas a Suryanarayana, Phanish a

a Georgia Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; STRAIN;

AB INITIO; BIAXIAL STRAINS; ELECTRONIC STRUCTURE CALCULATIONS; FINITE DEFORMATIONS; IN-PLANE STRAINS; STRAIN ENGINEERING;

GRAPHENE;

EID: 84930007191 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c5ra03422a Document Type: Article

Times cited : (45)

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