Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy

Microelectronic Engineering

Volumn 147, Issue , 2015, Pages 306-309

  Barton, A T ^a   Yue, R ^a   Anwar, S ^a   Zhu, H ^a   Peng, X ^a   McDonnell, S ^a   Lu, N ^a   Addou, R ^a   Colombo, L ^b   Kim, M J ^a   Wallace, R M ^a   Hinkle, C L ^a  

^a The University of Texas at Dallas   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

h BN; Heterostructure; HfSe2; MBE; TMD; Tunnel FET; van der Waals epitaxy

Indexed keywords

BORON NITRIDE; EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY; VAN DER WAALS FORCES; X RAY DIFFRACTION;

H-BN; HETEROSTRUCTURE; HFSE2; TMD; TUNNEL FET; VAN DER WAALS EPITAXY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84929173888     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2015.04.105     Document Type: Article

References (16)

1. Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, and M.S. Strano Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Nat. Nanotechnol. 7 11 2012 699 712 < http://www.nature.com/nnano/journal/v7/n11/abs/nnano.2012.193.html >
2. L. Song, L. Ci, H. Lu, P.B. Sorokin, C. Jin, J. Ni, A.G. Kvashnin, D.G. Kvashnin, J. Lou, and B.I. Yakobson Nano Lett. 10 8 2010 3209 3215
3. S. McDonnell, R. Addou, C. Buie, R.M. Wallace, and C.L. Hinkle Defect Dominated Doping and Contact Resistance in MoS2 ACS Nano 8 3 2014 2880 2888 < http://pubs.acs.org/doi/abs/10.1021/nn500044q >
4. X.S. Li, W.W. Cai, J.H. An, S. Kim, J. Nah, D.X. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S.K. Banerjee, L. Colombo, and R.S. Ruoff Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 324 5932 2009 1312 1314 ://WOS:000266635100041
5. S.K. Banerjee, L.F. Register, E. Tutuc, D. Reddy, and A.H. MacDonald IEEE Electron Device Lett. 30 2 2009 158 160 10.1109/LED.2008.2009362
6. F. Ohuchi, B. Parkinson, K. Ueno, and A. Koma van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2 J. Appl. Phys. 68 5 1990 2168 2175
7. R. Yue, A.T. Barton, H. Zhu, A. Azcatl, L.F. Pena, J. Wang, X. Peng, N. Lu, L. Cheng, R. Addou, S. McDonnell, L. Colombo, J.W.P. Hsu, J. Kim, M.J. Kim, R.M. Wallace, and C.L. Hinkle ACS Nano 9 1 2014 474 480 10.1021/nn5056496
8. K. Lee, B. Fallahazad, J. Xue, D.C. Dillen, K. Kim, T. Taniguchi, K. Watanabe, and E. Tutuc Science 345 6192 2014 58 61
9. Santosh, K. First-Principles Study of Novel Interfaces for Electronic Device and Energy Storage Applications. University of Texas at Dallas, Ph. D. Dissertation, 2014.
10. A. Azcatl, K.C. Santosh, X. Peng, N. Lu, S. McDonnell, X. Qin, F. De Dios, R. Addou, J. Kim, M.J. Kim, K. Cho, and R.M. Wallace HfO2 on UV-O3 exposed transition metal dichalcogenides: interfacial reactions study 2D Mater. 2 2015 014004
11. R. Trehan, Y. Lifshitz, and J. Rabalais J. Vac. Sci. Technol., A 8 6 1990 4026 4032
12. F. Bell, and L. Ley Phys. Rev. B 37 14 1988 8383
13. S. Miyazaki, H. Nishimura, M. Fukuda, L. Ley, and J. Ristein Appl. Surf. Sci. 113 1997 585 589
14. S. Miyazaki J. Vac. Sci. Technol., B 19 6 2001 2212 2216
15. A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki In determination of energy band alignment in ultrathin Hf-based oxide/Pt system J. Phys: Conf. Ser. 2013 012012 IOP Publishing
16. S. McDonnell, B. Brennan, A. Azcatl, N. Lu, H. Dong, C. Buie, J. Kim, C.L. Hinkle, M.J. Kim, and R.M. Wallace HfO2 on MoS2 by atomic layer deposition: adsorption mechanisms and thickness scalability ACS Nano 7 11 2013 10354 10361 10.1021/nn404775u