An atomically layered InSe avalanche photodetector

Nano Letters

Volumn 15, Issue 5, 2015, Pages 3048-3055

  Lei, Sidong ^a   Wen, Fangfang ^b   Ge, Liehui ^a   Najmaei, Sina ^a   George, Antony ^a   Gong, Yongji ^a   Gao, Weilu ^b   Jin, Zehua ^a   Li, Bo ^a   Lou, Jun ^a   Kono, Junichiro ^a,b   Vajtai, Robert ^a   Ajayan, Pulickel ^a,b   Halas, Naomi J ^a,b  

^a Rice University   (United States)

^b RICE UNIVERSITY   (United States)

Author keywords

2D photodetector; avalanche effect; impact ionization; InSe

Indexed keywords

ALUMINUM; ELECTROMAGNETIC WAVE ABSORPTION; ENERGY EFFICIENCY; IMPACT IONIZATION; LIGHT ABSORPTION; PHOTONS; SCHOTTKY BARRIER DIODES;

AVALANCHE EFFECTS; AVALANCHE MULTIPLICATION; AVALANCHE PHOTODETECTORS; CARRIER GENERATION; DEVICE PERFORMANCE; EXTERNAL QUANTUM EFFICIENCY; FAST RESPONSE TIME; INSE;

PHOTODETECTORS;

EID: 84929153504     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b00016     Document Type: Article

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