SCOPUS 정보 검색 플랫폼

RSC Advances

Volumn 5, Issue 42, 2015, Pages 33037-33043

Lateral heterojunctions within monolayer h-BN/graphene: a first-principles study

(5) Sun, Qilong a Dai, Ying a Ma, Yandong a Wei, Wei a Huang, Baibiao a

a SHANDONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GRAPHENE; HETEROJUNCTIONS; METAL INSULATOR TRANSITION; MONOLAYERS;

BAND GAP ENGINEERING; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; HEXAGONAL BORON NITRIDE (H-BN); INSULATOR TO METAL; SPINTRONIC DEVICE; STRAIN DEPENDENCE; THEORETICAL INVESTIGATIONS;

BORON NITRIDE;

EID: 84927931635 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c5ra03056k Document Type: Article

Times cited : (39)

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