Origins of photoluminescence decay kinetics in CdTe colloidal quantum dots

ACS Nano

Volumn 9, Issue 3, 2015, Pages 2960-2967

  Califano, Marco ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

Auger processes; colloidal quantum dots; nanocrystals; pseudopotential method; surface; trapping

Indexed keywords

CADMIUM TELLURIDE; CARRIER MOBILITY; DANGLING BONDS; II-VI SEMICONDUCTORS; NANOCRYSTALS; PHOTOLUMINESCENCE; SENSITIVITY ANALYSIS; SOLS; SURFACES; TELLURIUM;

ATOMISTIC SEMIEMPIRICAL PSEUDOPOTENTIAL METHOD; AUGER PROCESS; COLLOIDAL QUANTUM DOTS; EXPERIMENTAL CONDITIONS; PHOTOLUMINESCENCE DECAY CURVES; PSEUDOPOTENTIAL METHOD; SENSITIVITY TO VARIATIONS; TRAPPING;

SEMICONDUCTOR QUANTUM DOTS;

CADMIUM DERIVATIVE; CADMIUM TELLURIDE; COLLOID; QUANTUM DOT; TELLURIUM;

CHEMICAL STRUCTURE; CHEMISTRY; COLLOID; CONFORMATION; ELECTRON; KINETICS; LUMINESCENCE; PARTICLE SIZE; PHOTON; SURFACE PROPERTY;

CADMIUM COMPOUNDS; COLLOIDS; ELECTRONS; KINETICS; LUMINESCENT MEASUREMENTS; MODELS, MOLECULAR; MOLECULAR CONFORMATION; PARTICLE SIZE; PHOTONS; QUANTUM DOTS; SURFACE PROPERTIES; TELLURIUM;

EID: 84925660926     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5070327     Document Type: Article

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