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Volumn 6, Issue 4, 2012, Pages 3063-3069

How quickly does a hole relax into an engineered defect state in CDSE quantum dots

Author keywords

cooling; doping; holes; LO phonons; quantum dots

Indexed keywords

BAND EDGE; CDSE; CDSE QUANTUM DOTS; COMBINED EFFECT; DEFECT BANDS; DEFECT ENERGY; DEFECT STATE; ENGINEERED DEFECTS; HOLE RELAXATION; HOLES; LO PHONONS; LONGITUDINAL OPTICAL PHONONS; STATE-FILLING; SURFACE EFFECT; TRANSIENT ABSORPTION SPECTROSCOPIES;

EID: 84860387778     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn204690p     Document Type: Article
Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.