Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device

Applied Physics Letters

Volumn 106, Issue 11, 2015, Pages

  Lee, Daeseok ^a   Moon, Kibong ^a   Park, Jaesung ^a   Park, Sangsu ^b   Hwang, Hyunsang ^a,b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BRAIN; CALCIUM; ECONOMIC AND SOCIAL EFFECTS; MANGANESE OXIDE; METALLIC COMPOUNDS;

BRAIN-INSPIRED COMPUTING; COMPUTATIONAL ACCURACY; COMPUTING SYSTEM; CONDUCTANCE STATE; METAL OXIDES; RESISTIVE CHANGE MEMORY; TRADE OFF;

FREE ENERGY;

EID: 84925356870     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4915924     Document Type: Article

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