High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy

ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference

Volumn 2007, Issue , 2007, Pages 283-286

  Raeissi, B ^a   Piscator, J ^a   Engstrom O ^a   Hall, S ^b   Buiu, O ^b   Lemme, M C ^c   Gottlob, H D B ^c   Hurley, P K ^d   Cherkaoui, K ^d   Osten, H J ^e  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c AMO GMBH   (Germany)

^d UNIVERSITY COLLEGE CORK   (Ireland)

^e LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CAPACITANCE; GADOLINIUM COMPOUNDS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MOS DEVICES;

CAPACITANCE FREQUENCY SPECTROSCOPY; INTERFACE ELECTRON STATES;

GATE DIELECTRICS;

EID: 39549106234     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2007.4430933     Document Type: Conference Paper

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