Atomic layer deposition of undoped TiO2 exhibiting p -type conductivity

ACS Applied Materials and Interfaces

Volumn 7, Issue 9, 2015, Pages 5134-5140

  Iancu, Andrei T ^a   Logar, Manca ^a   Park, Joonsuk ^a   Prinz, Fritz B ^a  

^a Stanford University   (United States)

Author keywords

atomic layer deposition; Hall effect; p n homojunction diode; p type conductivity; titanium dioxide; transmission electron microscopy; X ray diffraction; X ray photoelectron spectroscopy

Indexed keywords

ATOMS; HALL EFFECT; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETIC SEMICONDUCTORS; OXIDE MINERALS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; TITANIUM DIOXIDE; TITANIUM METALLOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

AMBIENT ENVIRONMENT; HOMOJUNCTION DIODES; MINIMAL PROCESSING; ORDERS OF MAGNITUDE; P TYPE CONDUCTIVITY; P-N HOMOJUNCTIONS; PHOTOCATALYTIC APPLICATION; RECTIFYING CHARACTERISTICS;

ATOMIC LAYER DEPOSITION;

EID: 84924539282     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am5072223     Document Type: Article

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