Lateral piezopotential-gated field-effect transistor of ZnO nanowires

Nano Energy

Volumn 13, Issue , 2015, Pages 233-239

  Xu, Zhi ^a,b   Zhang, Chao ^a   Wang, Wenlong ^b   Bando, Yoshio ^a   Bai, Xuedong ^b,c   Golberg, Dmitri ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c Collaborative Innovation Center of Quantum Matter ^*  (China)

Author keywords

Field effect transistors; In situ TEM; Nanodevices; Piezopotential; Piezotronics; Zinc oxide nanowires

Indexed keywords

NANOWIRES; POINT CONTACTS; SCHOTTKY BARRIER DIODES; TRANSISTORS; ZINC OXIDE;

IN-SITU TEM; NANO-DEVICES; PIEZOPOTENTIAL; PIEZOTRONICS; ZINC OXIDE NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 84924375933     PISSN: 22112855     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nanoen.2015.02.030     Document Type: Article

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