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Journal of Applied Physics

Volumn 117, Issue 6, 2015, Pages

Selective growth of Pb islands on graphene/SiC buffer layers

(7) Liu, X T a Hu, T W a,b Miao, Y P a Ma, D Y a Chu, Paul K b Ma, F a,b Xu, K W a,c

a XI'AN JIAOTONG UNIVERSITY (China)

b CITY UNIVERSITY OF HONG KONG (Hong Kong)

c XI'AN UNIVERSITY OF ARTS AND SCIENCE (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BUFFER LAYERS; DECOMPOSITION; GRAPHENE; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; SILICON CARBIDE;

ADSORPTION ENERGIES; FIRST PRINCIPLE CALCULATIONS; PB FLUX; SELECTIVE GROWTH; SIC BUFFER LAYERS; SILICON CARBIDES (SIC);

LEAD;

EID: 84923667284 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4908013 Document Type: Article

Times cited : (18)

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