All-magnetic magnetoresistive random access memory based on four terminal mCell device

Journal of Applied Physics

Volumn 117, Issue 17, 2015, Pages

  Bromberg, D M ^a   Sumbul, H E ^a   Zhu, J G ^a   Pileggi, L ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; DIGITAL STORAGE; MAGNETIC DEVICES; MAGNETIC STORAGE; RANDOM ACCESS STORAGE; TUNNEL JUNCTIONS;

AREA SAVINGS; BIT-LINE ANDS; FINFETS; MAGNETIC TUNNEL JUNCTION; NON-VOLATILE; ON CHIPS; PROJECTED AREA; WORDLINES;

MRAM DEVICES;

EID: 84923307062     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4913279     Document Type: Article

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