Spin-transfer torque magnetic random access memory (STT-MRAM)

ACM Journal on Emerging Technologies in Computing Systems

Volumn 9, Issue 2, 2013, Pages

  Apalkov, Dmytro ^a   Khvalkovskiy, Alexey ^a   Watts, Steven ^a   Nikitin, Vladimir ^a   Tang, Xueti ^a   Lottis, Daniel ^a   Moon, Kiseok ^a   Luo, Xiao ^a   Chen, Eugene ^a   Ong, Adrian ^a   Driskill Smith, Alexander ^a   Krounbi, Mohamad ^a  

^a Grandis Inc   (United States)

Author keywords

Magnetic memory; Magnetic tunneling junction; MRAM; Spin polarization; Spin transfer torque; Tunneling magnetoresistance

Indexed keywords

MAGNETIC MEMORY; MAGNETIC TUNNELING JUNCTIONS; MRAM; SPIN TRANSFER TORQUE; TUNNELING MAGNETORESISTANCE;

CELLS; CYTOLOGY; DYNAMIC RANDOM ACCESS STORAGE; MAGNETIC DEVICES; MAGNETIC MULTILAYERS; MAGNETIC STORAGE; SPIN POLARIZATION; STATIC RANDOM ACCESS STORAGE; TECHNOLOGY;

MRAM DEVICES;

EID: 84885655567     PISSN: 15504832     EISSN: 15504840     Source Type: Journal    
DOI: 10.1145/2463585.2463589     Document Type: Review

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