Se interlayer in CIGS absorption layer for solar cell devices

Journal of Alloys and Compounds

Volumn 633, Issue , 2015, Pages 31-36

  Lee, Seung Kyu ^a   Sim, Jae Kwan ^a   Kissinger, N J Suthan ^b   Song, Il Seok ^a   Kim, Jin Soo ^a   Baek, Byung Joon ^a   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

^b JUBAIL UNIVERSITY COLLEGE   (Saudi Arabia)

Author keywords

Cu(In,Ga)Se2 (CIGS); Diffusion barrier; Fe diffusion; Flexible; Ga gradient; Sputtering; Stainless steel

Indexed keywords

DIFFUSION; DIFFUSION BARRIERS; FABRICATION; GRADING; MASS SPECTROMETRY; OPEN CIRCUIT VOLTAGE; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SOLAR CELLS; SPUTTERING; STAINLESS STEEL; X RAY DIFFRACTION;

CARRIER RECOMBINATION; CU (IN ,GA)SE; DIRECT CURRENT MAGNETRON SPUTTERING; FE DIFFUSION; FLEXIBLE; RAPID THERMAL ANNEALING (RTA); SECONDARY ION MASS SPECTROSCOPIES (SIMS); SPACE CHARGE REGIONS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84923112258     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2015.01.126     Document Type: Article

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