Ga gradient behavior of CIGS thin films prepared through selenization of CuGa/In stacked elemental layers

Surface and Coatings Technology

Volumn 259, Issue PB, 2014, Pages 335-339

  Sung, Huan Hsin ^a   Tsai, Du Cheng ^a   Chang, Zue Chin ^b   Kuo, Bing Hau ^a   Lin, Yi Chen ^a   Lin, Tien Jen ^a   Liang, Shih Chang ^c   Shieu, Fuh Sheng ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL CHIN YI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

CIGS solar cell; Ga gradient; Na diffusion

Indexed keywords

COPPER COMPOUNDS; DIFFUSION; FILM GROWTH; GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS; SODIUM; SOLAR CELLS;

ANNEALING PROCESS; ANNEALING TEMPERATURES; CIGS SOLAR CELLS; DIFFUSION BEHAVIOR; METALLIC PRECURSOR; SINGLE CHALCOPYRITE PHASE; STACKED ELEMENTAL LAYER; TWO-STAGE PROCESS;

COPPER;

EID: 84923431318     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2014.02.039     Document Type: Article

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