SCOPUS 정보 검색 플랫폼

Volumn 631, Issue , 2015, Pages 125-128

Influence of illumination intensity on the electrical characteristics and photoresponsivity of the Ag/ZnO Schottky diodes

(5) Zhu, RuiJuan a Zhang, XinAn a Zhao, JunWei a Li, RuoPing a Zhang, WeiFeng a

a HENAN UNIVERSITY (China)

Author keywords

Barrier height; Ideality factor; Schottky diodes; Series resistance

Indexed keywords

DIODES; ELECTRIC RESISTANCE; INTERFACE STATES; ITO GLASS; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SILVER; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

BARRIER HEIGHTS; ELECTRICAL CHARACTERISTIC; IDEALITY FACTORS; PHOTORESPONSE CHARACTERISTICS; RF-MAGNETRON SPUTTERING; SCHOTTKY DIODES; SERIES RESISTANCES; STRUCTURAL AND OPTICAL PROPERTIES;

SCHOTTKY BARRIER DIODES;

EID: 84922322346 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2015.01.017 Document Type: Article

Times cited : (17)

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