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Journal of Physics and Chemistry of Solids

Volumn 73, Issue 11, 2012, Pages 1259-1263

Effect of annealing temperature on the characteristics of ZnO thin films

(4) Chen, Yi a Jyoti, Nayak a Ko, Hyun U a Kim, Jaehwan a

a Inha University (South Korea)

Author keywords

A. Semiconductors; A. ZnO; B. Sol gel growth; C. X ray diffraction; D. Electrical properties

Indexed keywords

AGING TIME; ANNEALING TEMPERATURES; FORWARD CURRENTS; GRANULAR SHAPE; OXIDIZED STATE; OXYGEN ATOM; SCHOTTKY CHARACTERISTICS; SCHOTTKY DIODES; SI SUBSTRATES; SOL-GEL GROWTH; UV-VISIBLE; XPS ANALYSIS; ZNO; ZNO FILMS; ZNO THIN FILM;

ANNEALING; CRYSTALLITE SIZE; ELECTRIC PROPERTIES; METALLIC FILMS; OPTICAL FILMS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR GROWTH; SOL-GEL PROCESS; SOL-GELS; X RAY DIFFRACTION; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84865034268 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/j.jpcs.2012.06.007 Document Type: Article

Times cited : (30)

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